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4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication

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Hangzhou Freqcontrol Electronic Technology Ltd.

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4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication

Brand Name : CQT

Model Number : LNOI Wafer

Certification : ISO:9001, ISO:14001

Place of Origin : China

MOQ : 10 pcs

Price : $2000/pc

Payment Terms : T/T

Supply Ability : 50000 pcs/Month

Delivery Time : 1-4 weeks

Packaging Details : Cassette/ Jar package, vaccum sealed

Product : LiNbO3 On Insulator

Diameter : 4 inch, 6 inch

Top Layer : Lithium Niobate

Top Thickness : 300~600nm

Insolation : SiO2 Thermal Oxide

Insolation Thickness : 2000±15nm; 3000±50nm; 4700±100nm

the support layer : Si、Fused silica

Application : Optical Waveguides and Microwaveguides

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4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication

‌Revolutionize Photonics with Ultra-Low-Loss LNOI Wafers‌

‌Next-Gen Lithium Niobate-on-Insulator (LNOI) Platform‌
Unlock unprecedented performance in integrated photonics with our cutting-edge LNOI wafers, engineered for ultra-low optical loss and sub-nanometer surface roughness . Combining stoichiometric LiNbO₃ thin films with thermally oxidized SiO₂ buried layers, our wafers deliver ‌>30x higher nonlinear efficiency‌ than conventional bulk crystals, while enabling CMOS-compatible fabrication.

‌Key Advantages‌
✓ ‌Breakthrough EO Performance‌: Achieve ‌>100 GHz modulation bandwidth‌ with r₃₃ >30 pm/V, ideal for 800G/1.6T coherent transceivers.
✓ ‌Quantum-Ready Precision‌: Custom periodic poling (PPLN) with <5 nm domain error for entangled photon generation.
✓ ‌Power-Hardened Design‌: Withstand >10 MW/cm² optical intensity (Telcordia GR-468 certified).

‌Applications‌
▷ 5G/6G ultra-compact EO modulators
▷ Topological photonic circuits & optical computing
▷ Quantum frequency converters (C/L-band to telecom band)
▷ High-sensitivity LiDAR photodetectors

‌Technical Specifications‌
• Wafer Size: 100/150 mm diameter (2" to 6" customizable)
• LiNbO₃ Layer: X-cut/Z-cut, thickness 300±5 nm (standard)
• Buried Oxide: 1-3 μm SiO₂, breakdown voltage >200 V/μm
• Substrate: High-resistivity Si (>5 kΩ·cm)

LNOI Wafer
Structure	LN / SiO2 / Si	LTV / PLTV	< 1.5 μm ( 5∗ 5 mm2 ) / 95%
Diameter	Φ100 ± 0.2 mm	Edge Exclution	5 mm
Thickness	500 ± 20 μm	Bow	Within 50 μm
Primary Flat Length	47.5 ± 2 mm 57.5 ± 2 mm	Edge Trimming	2 ± 0.5 mm
Wafer Beveling	R Type	Environmental	Rohs 2.0
Top LN Layer
Average Thickness	400/600±10 nm	Uniformity	< 40nm @17 Points
Refraction index	no > 2.2800, ne < 2.2100 @ 633 nm	Orientation	X axis ± 0.3°
Grade	Optical	Surface Ra	< 0.5 nm
Defects	>1mm None; ≦1 mm Within 300 total	Delamination	None
Scratch	>1cm None; ≦1cm Within 3	Primary Flat	Perpendicular to +Y Axis ± 1°
Isolation SiO2 Layer
Average Thickness	2000nm ± 15nm 3000nm ± 50nm 4700nm ± 100nm	Uniformity	< ±1% @17 Points
Fab. Method	Thermal Oxide	Refraction index	1.45-1.47 @ 633 nm
Substrate
Material	Si	Orientation	<100> ± 1°
Primary Flat Orientation	<110> ± 1°	Resistivity	> 10 kΩ·cm
Backside Contamination	No visible stain	Backside	Etch

4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication

4-Inch 6-Inch LNOI Wafers The Perfect Choice for Compact and High-Performance Optical Communication Images

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